- Package / Case :
- Organization :
24 產品
| 圖片 | 型號 | 價格 | 數量 | 庫存 | 製造商 | 描述 | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Memory Size | Maximum Clock Frequency | Supply Voltage - Max | Supply Voltage - Min | Interface Type | Organization | Access Time | Supply Current - Max | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 36 36M | SMD/SMT | BGA-165 | - 40 C | + 85 C | Tray | 36 Mbit | 375 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 36 | 4.2 ns | 290 mA, 400 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 36 32M | SMD/SMT | BGA-165 | - 40 C | + 85 C | Tray | 36 Mbit | 375 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 36 | 4.2 ns | 290 mA, 400 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 32 32M | SMD/SMT | TQFP-100 | - 40 C | + 85 C | Tray | 36 Mbit | 375 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 32 | 4.2 ns | 290 mA, 400 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 36 36M | SMD/SMT | TQFP-100 | - 40 C | + 85 C | Tray | 36 Mbit | 375 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 36 | 4.2 ns | 290 mA, 400 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 36 36M | SMD/SMT | TQFP-100 | - 40 C | + 85 C | Tray | 36 Mbit | 375 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 36 | 4.2 ns | 290 mA, 400 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 36 36M | SMD/SMT | BGA-165 | - 40 C | + 85 C | Tray | 36 Mbit | 375 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 36 | 4.2 ns | 290 mA, 400 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 32 32M | SMD/SMT | BGA-165 | - 40 C | + 85 C | Tray | 36 Mbit | 375 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 32 | 4.2 ns | 290 mA, 400 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 36 36M | SMD/SMT | BGA-165 | - 40 C | + 85 C | Tray | 36 Mbit | 375 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 36 | 4.2 ns | 290 mA, 400 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 32 32M | SMD/SMT | BGA-165 | - 40 C | + 85 C | Tray | 36 Mbit | 375 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 32 | 4.2 ns | 290 mA, 400 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 36 36M | SMD/SMT | BGA-165 | - 40 C | + 85 C | Tray | 36 Mbit | 375 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 36 | 4.2 ns | 290 mA, 400 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 36 36M | SMD/SMT | BGA-119 | - 40 C | + 85 C | Tray | 36 Mbit | 375 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 36 | 4.2 ns | 290 mA, 400 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 36 36M | SMD/SMT | BGA-119 | - 40 C | + 85 C | Tray | 36 Mbit | 375 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 36 | 4.2 ns | 290 mA, 400 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 36 36M | SMD/SMT | BGA-119 | - 40 C | + 85 C | Tray | 36 Mbit | 375 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 36 | 4.2 ns | 290 mA, 400 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 36 32M | SMD/SMT | BGA-119 | - 40 C | + 85 C | Tray | 36 Mbit | 375 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 36 | 4.2 ns | 290 mA, 400 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 32 32M | SMD/SMT | TQFP-100 | - 40 C | + 85 C | Tray | 36 Mbit | 375 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 32 | 4.2 ns | 290 mA, 400 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 36 36M | SMD/SMT | TQFP-100 | - 40 C | + 85 C | Tray | 36 Mbit | 375 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 36 | 4.2 ns | 290 mA, 400 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 36 36M | SMD/SMT | BGA-165 | - 40 C | + 85 C | Tray | 36 Mbit | 375 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 36 | 4.2 ns | 290 mA, 400 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 36 36M | SMD/SMT | BGA-165 | - 40 C | + 85 C | Tray | 36 Mbit | 375 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 36 | 4.2 ns | 290 mA, 400 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 36 32M | SMD/SMT | BGA-165 | - 40 C | + 85 C | Tray | 36 Mbit | 375 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 36 | 4.2 ns | 290 mA, 400 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 32 32M | SMD/SMT | BGA-165 | - 40 C | + 85 C | Tray | 36 Mbit | 375 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 32 | 4.2 ns | 290 mA, 400 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 36 36M | SMD/SMT | BGA-165 | - 40 C | + 85 C | Tray | 36 Mbit | 375 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 36 | 4.2 ns | 290 mA, 400 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 32 32M | SMD/SMT | BGA-165 | - 40 C | + 85 C | Tray | 36 Mbit | 375 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 32 | 4.2 ns | 290 mA, 400 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 32 32M | SMD/SMT | BGA-165 | - 40 C | + 85 C | Tray | 36 Mbit | 375 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 32 | 4.2 ns | 290 mA, 400 mA | |||
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查看 | GSI Technology | SRAM 2.5 or 3.3V 1M x 36 36M | SMD/SMT | BGA-165 | - 40 C | + 85 C | Tray | 36 Mbit | 375 MHz | 3.6 V | 2.3 V | Parallel | 1 M x 36 | 4.2 ns | 290 mA, 400 mA |
