- Memory Size :
- Technology :
- Operating Temperature :
- Clock Frequency :
- Voltage - Supply :
- Supplier Device Package :
5 產品
| 圖片 | 型號 | 價格 | 數量 | 庫存 | 製造商 | 描述 | Package / Case | Series | Packaging | Memory Type | Memory Size | Technology | Access Time | Mounting Type | Operating Temperature | Part Status | Memory Format | Clock Frequency | Write Cycle Time - Word, Page | Memory Interface | Voltage - Supply | Supplier Device Package | Factory Stock | Minimum Quantity | |
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查看 | ISSI, Integrated Silicon Solution Inc | IC DRAM 256M PARALLEL 90TFBGA | 90-TFBGA | - | Tray | Volatile | 256Mb (8M x 32) | SDRAM - Mobile | 5.5ns | Surface Mount | -40°C ~ 85°C (TA) | Not For New Designs | DRAM | 166MHz | - | Parallel | 2.3 V ~ 3 V | 90-TFBGA (8x13) | 0 | 240 | |||
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查看 | ISSI, Integrated Silicon Solution Inc | IC DRAM 256M PARALLEL 90TFBGA | 90-TFBGA | - | Tray | Volatile | 256Mb (8M x 32) | SDRAM - Mobile | 6ns | Surface Mount | -40°C ~ 85°C (TA) | Not For New Designs | DRAM | 133MHz | - | Parallel | 2.3 V ~ 3 V | 90-TFBGA (8x13) | 0 | 240 | |||
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查看 | Winbond Electronics | IC DRAM 128M PARALLEL 90VFBGA | 90-TFBGA | - | Tray | Volatile | 128Mb (4M x 32) | SDRAM - Mobile LPSDR | 5.4ns | Surface Mount | -25°C ~ 85°C (TC) | Not For New Designs | DRAM | 133MHz | 15ns | Parallel | 1.7 V ~ 1.95 V | 90-VFBGA (8x13) | 0 | 240 | |||
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查看 | Winbond Electronics | IC DRAM 128M PARALLEL 90VFBGA | 90-TFBGA | - | Tray | Volatile | 128Mb (4M x 32) | SDRAM - Mobile LPSDR | 5.4ns | Surface Mount | -40°C ~ 85°C (TA) | Not For New Designs | DRAM | 166MHz | 15ns | Parallel | 1.7 V ~ 1.95 V | 90-VFBGA (8x13) | 0 | 240 | |||
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查看 | Winbond Electronics | IC DRAM 128M PARALLEL 90VFBGA | 90-TFBGA | - | Tray | Volatile | 128Mb (4M x 32) | SDRAM - Mobile LPSDR | 5.4ns | Surface Mount | -25°C ~ 85°C (TC) | Not For New Designs | DRAM | 166MHz | 15ns | Parallel | 1.7 V ~ 1.95 V | 90-VFBGA (8x13) | 0 | 240 |
